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BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
DESCRIPTION
BS616UV1620
* Ultra low operation voltage : 1.8 ~ 2.3V * Ultra low power consumption : Vcc = 1.8V C-grade : 25mA (Max.) operating current I- grade : 30mA (Max.) operating current 1.2uA (Typ.) CMOS standby current * High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V * Automatic power down when chip is deselected * Three state outputs and TTL compatible * Fully static operation * Data retention supply voltage as low as 1.5V * Easy expansion with CE1, CE2 and OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin
The BS616UV1620 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.2uA and maximum access time of 70/100ns in 2.0V operation. This device provide three control inputs and three states output drivers for easy memory expansion. The BS616UV1620 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV1620 is available in DICE form and 48-pin BGA type.
PRODUCT FAMILY
SPEED (ns)
Vcc=2.0V
PRODUCT FAMILY BS616UV1620BC BS616UV1620FC BS616UV1620BI BS616UV1620FI
OPERATING TEMPERATURE +0 O C to +70 O C -40 O C to +85 O C
Vcc RANGE
POWER DISSIPATION STANDBY Operating
(ICCSB1, Max) (ICC, Max)
PKG TYPE BGA-48-0810 BGA-48-0912 BGA-48-0810 BGA-48-0912
Vcc=2.0V
Vcc=2.0V
1.8V ~ 2.3V 1.8V ~ 2.3V
70 / 100 70 / 100
30uA 40uA
25mA 30mA
PIN CONFIGURATIONS
1 A B C D E F G H LB D8 D9 VSS VCC D14 D15 A18 2 OE UB D10 D11 D12 D13 CIO . A8 3 A0 A3 A5 A17 A19 A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 D1 D3 D4 D5 WE A11 6 CE2 D0 D2
BLOCK DIAGRAM
A19 A15 A14 A13 A12 A11 A10 A9 A8 A17 A7 A6 Address Input Buffer 24 Row Decoder 4096 Memory Array 4096 x 4096
4096 D0 16(8) Data Input Buffer 16(8) Column I/O
VCC VSS D6 D7 SAE .
. . . .
D15 CE1 CE2 WE OE UB LB CIO Vdd Vss
. . . .
Write Driver
16(8) Sense Amp 256(512) Column Decoder
16(8) Data Output
Buffer
16(18) Control Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 A18 (SAE)
48-Ball CSP top View
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616UV1620
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Revision 2.2 April 2001
BSI
PIN DESCRIPTIONS
BS616UV1620
Name
A0-A19 Address Input SAE Address Input CIO x8/x16 select input
Function
These 20 address inputs select one of the 1,048,576 x 16-bit words in the RAM. This address input incorporates with the above 20 address inputs select one of the 2,097,152 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH. This input selects the organization of the SRAM. 1,048,576 x 16-bit words configuration is selected if CIO is HIGH. 2,097,152 x 8-bit bytes configuration is selected if CIO is LOW. CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when data read from or write to the device. If either chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. Lower byte and upper byte data input/output control pins. The chip is deselected when both LB and UB pins are HIGH. These 16 bi-directional ports are used to read data from or write data into the RAM. Power Supply Ground
CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input
WE Write Enable Input
OE Output Enable Input
LB and UB Data Byte Control Input D0 - D15 Data Input/Output Ports Vcc Gnd
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Revision 2.2 April 2001
BSI
TRUTH TABLE
MODE CE1 H Fully Standby X Output Disable L L H H H X CE2 X X X X X X L Read from SRAM ( WORD mode ) L H L H H H L L Write to SRAM ( WORD mode ) L H X L H H L Read from SRAM ( BYTE Mode ) Write to SRAM ( BYTE Mode ) L H L H L X X X H L L H L L X A-1 X X X OE WE CIO LB X UB X X SAE
BS616UV1620
D0~7
D8~15
VCC Current
High-Z
High-Z
ICCSB, ICCSB1
High-Z Dout High-Z Dout Din X Din Dout
High-Z High-Z Dout Dout X Din Din High-Z
ICC
ICC
ICC
ICC
L
H
X
L
L
X
X
A-1
Din
X
ICC
ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL VTERM TBIAS TSTG PT IOUT PARAMETER
Terminal Voltage Respect to GND with
OPERATING RANGE
UNITS
V
O
RATING
-0.5 to Vcc+0.5 -40 to +125 -60 to +150 1.0 20
RANGE
Commercial Industrial
AMBIENT TEMPERATURE
0 C to +70 C -40 C to +85 C
O O O O
Vcc
1.8V ~ 2.3V 1.8V ~ 2.3V
Temperature Under Bias Storage Temperature Power Dissipation DC Output Current
C C
O
W mA
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CIN CDQ
PARAMETER Input Capacitance Input/Output Capacitance
CONDITIONS
MAX.
UNIT
VIN=0V VI/O=0V
6 8
pF pF
1. This parameter is guaranteed and not tested.
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Revision 2.2 April 2001
BSI
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER NAME
V V I I V V I
IL IH IL
BS616UV1620
PARAMETER
Guaranteed Input Low Voltage(2) Guaranteed Input High Voltage(2) Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Operating Power Supply Current Standby Current-TTL
TEST CONDITIONS
Vcc= 2.0V Vcc= 2.0V
MIN. TYP. (1) MAX.
-0.5 1.4 ---1.6 --------0.4 Vcc+0.2 1 1 0.4 -25
UNITS
V V uA uA V V mA
Vcc = Max, VIN = 0V to Vcc Vcc = Max, CE1 = VIH, or CE2 = ViL, or OE = VIH, VI/O = 0V to Vcc Vcc= max, IOL = 1mA Vcc= Min, IOH = -0.5mA Vcc= max, CE1 = VILand CE2 = VIH, IDQ = 0mA, F = Fmax(3) Vcc= max, CE1 = VIH or CE2 = VIL, IDQ = 0mA Vcc= max,CE1 Vcc-0.2V, or 0.2V, or LB and UB CE2 Vcc - 0.2V, VIN Vcc - 0.2V or VIN 0.2V
Vcc= 2.0V Vcc= 2.0V
OL
OL OH
CC
Vcc= 2.0V
I
CCSB
Vcc= 2.0V
--
--
0.8
mA
I
CCSB1
Standby Current-CMOS
Vcc= 2.0V
--
1.2
30
uA
1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/ tRC .
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Revision 2.2 April 2001
BSI
DATA RETENTION CHARACTERISTICS ( TA = 0oC to +70oC )
SYMBOL
VDR
BS616UV1620
TEST CONDITIONS
CE1 LB VIN CE1 VIN Vcc - 0.2V or CE2 0.2V or Vcc - 0.2V and UB Vcc - 0.2V Vcc - 0.2V or VIN 0.2V Vcc - 0.2V or CE2 0.2V Vcc - 0.2V or VIN 0.2V
PARAMETER
Vcc for Data Retention
MIN.
1.5
TYP. (1)
--
MAX.
--
UNITS
V
ICCDR
Data Retention Current Chip Deselect to Data Retention Time
--
0.8
15
uA
tCDR tR
0 See Retention Waveform TRC (2)
---
---
ns ns
Operation Recovery Time
1. Vcc = 1.5V, TA = + 25OC 2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
Vcc
VIH
Vcc
VDR
1.5V
Vcc
t CDR
CE1 Vcc - 0.2V
tR
VIH
CE1
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
Vcc
Vcc
VDR
1.5V
Vcc
t CDR
tR
CE2 0.2V
CE2
VIL
VIL
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Revision 2.2 April 2001
BSI
AC TEST CONDITIONS
Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Vcc/0V 5ns 0.5Vcc
WAVEFORM
BS616UV1620
KEY TO SWITCHING WAVEFORMS
INPUTS MUST BE STEADY MAY CHANGE FROM H TO L MAY CHANGE FROM L TO H DON T CARE: ANY CHANGE PERMITTED DOES NOT APPLY OUTPUTS MUST BE STEADY WILL BE CHANGE FROM H TO L WILL BE CHANGE FROM L TO H CHANGE : STATE UNKNOWN CENTER LINE IS HIGH IMPEDANCE "OFF "STATE
AC TEST LOADS AND WAVEFORMS
2V OUTPUT
100PF
INCLUDING JIG AND SCOPE
1333
2V OUTPUT
1333
,
5PF 2000
INCLUDING JIG AND SCOPE
2000
FIGURE 1A
THEVENIN EQUIVALENT 800
FIGURE 1B
OUTPUT
1.2V
ALL INPUT PULSES
Vcc GND
10%
90% 90%
10%
5ns
FIGURE 2
AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to +70oC, Vcc = 2.0V )
READ CYCLE
JEDEC PARAMETER NAME DESCRIPTION
Read Cycle Time Address Access Time Chip Select Access Time (CE1) (CE2) Chip Select Access Time Data Byte Control Access Time (LB,UB) Output Enable to Output Valid Chip Select to Output Low Z (CE2,CE1) Data Byte Control to Output Low Z (LB,UB) Output Enable to Output in Low Z Chip Deselect to Output in High Z (CE2,CE1) Data Byte Control to Output High Z (LB,UB) Output Disable to Output in High Z Output Disable to Output Address Change
PARAMETER NAME
BS616UV1620-70 MIN. TYP. MAX.
70 70 70 70 50 50 10 10 10 0 0 0 10
BS616UV1620-10 MIN. TYP. MAX.
100 100 100 100 60 60 15 15 15 0 0 0 15
UNIT
ns ns ns ns ns ns ns ns ns ns ns ns ns
tAVAX tAVQV tE1LQV tE2LQV tBA tGLQV tE1LQX tBE tGLQX tE1HQZ tBDO tGHQZ tAXQX
tRC tAA tACS1 tACS2 tBA tOE tCL1 tBE tOLZ tCHZ tBDO tOHZ tOH
35 30 30
40 35 35
R0201-BS616UV1620
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Revision 2.2 April 2001
BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
ADDRESS
BS616UV1620
t RC t AA t OH
t OH
D OUT
READ CYCLE2 (1,3,4)
CE2
t t
ACS2
ACS1
CE1
t
D OUT
(5) CLZ
(5) t CHZ
READ CYCLE3 (1,4)
ADDRESS
t RC
t
OE
AA
t
CE2
OE
t
OH
t t t t
(5) CLZ
ACS2
CE1
OLZ
ACS1
t t
OHZ CHZ
(5)
(1,5)
LB,UB
t
BE
t t
BA
BDO
D OUT
NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE1 = VIL and CE2 = VIH. 3. Address valid prior to or coincident with CE1 transition low and CE2 transition high. 4. OE = VIL . 5. Transition is measured 500mV from steady state with CL = 30pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested.
R0201-BS616UV1620
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Revision 2.2 April 2001
BSI
AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to +70oC, Vcc = 2.0V )
WRITE CYCLE
JEDEC PARAMETER NAME PARAMETER NAME DESCRIPTION
Write Cycle Time Chip Select to End of Write Address Set up Time Address Valid to End of Write Write Pulse Width (CE2, CE1, WE) Write Recovery Time Data Byte Control to End of Write (LB,UB) Write to Output in High Z Data to Write Time Overlap Data Hold from Write Time Output Disable to Output in High Z End of Write to Output Active
BS616UV1620
BS616UV1620-70 MIN.
70 70 0 70 50 0 60 0 30 0 0 5
BS616UV1620-10 MIN.
100 100 0 100 70 0 80 0 40 0 0 10
UNIT
ns ns ns ns ns ns ns ns ns ns ns ns
tAVAX tE1LWH tAVWL tAVWH tWLWH tWHAX tBW tWLQZ tDVWH tWHDX tGHQZ tWHQX
tWC tCW tAS tAW tWP tWR tBW tWHZ tDW tDH tOHZ tOW
TYP.
MAX.
TYP.
MAX.
30
40
30
40
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t
ADDRESS
WC
t WR
OE
(3)
CE2
(5)
t CW
CE1
(5)
(11)
t
LB,UB
(5)
BW
t AW
WE
(3)
t AS
(4,10)
t WP
(2)
t OHZ
D OUT
t DH t DW
D IN
R0201-BS616UV1620
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Revision 2.2 April 2001
BSI
WRITE CYCLE2 (1,6)
BS616UV1620
t WC
ADDRESS
CE2
(11)
CE1
(5)
t t
CW
BW
LB,UB
(5)
t
WE
AW
t WP
t WR
(3)
(2)
t AS
(4,10)
t
DH
t WHZ
D OUT
(7)
(8)
t DW t
DH (8,9)
D IN
NOTES:
1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE2 high transition or CE1 low transition or LB,UB low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. Transition is measured 500mV from steady state with CL = 30pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE2 going high or CE1 going low to the end of write.
R0201-BS616UV1620
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Revision 2.2 April 2001
BSI
ORDERING INFORMATION
BS616UV1620
BS616UV1620
XX
-- Y Y
SPEED 70: 70ns 10: 100ns GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE B : BGA - 48 (8x10mm) F : BGA - 48 (9x12mm)
PACKAGE DIMENSIONS
0.05
0.25
NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
1.4 Max.
SIDE VIEW
D 0.1 D1
N 48 D 10.0 E 8.0 D1 5.25 E1 3.75 e 0.75
SOLDER BALL
0.35
0.05
e
E1 VIEW A
48 mini-BGA (8 x 10mm)
R0201-BS616UV1620
E
0.1
10
Revision 2.2 April 2001
BSI
PACKAGE DIMENSIONS (continued)
0.25 0.05 1.4 Max.
BS616UV1620
NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
SIDE VIEW
D 0.1 3.375 D1
N 48
D 12.0
E 9.0
D1 5.25
E1 3.75
e 0.75
SOLDER BALL 0.35 0.05
e
VIEW A
48 mini-BGA (9 x 12mm)
2.625
E 0.1
E1
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Revision 2.2 April 2001
BSI
REVISION HISTORY
Revision
2.2
BS616UV1620
Description
2001 Data Sheet release
Date
Apr. 15, 2001
Note
R0201-BS616UV1620
12
Revision 2.2 April 2001

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